SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND |
| 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND |
| 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | 10.00 AMPERES MAXIMUM BASE CURRENT, DC AND |
| 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC |
POWER RATING PER CHARACTERISTIC | 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
INCLOSURE MATERIAL | METAL |
TERMINAL TYPE AND QUANTITY | 1 THREADED STUD AND |
| 2 SOLDER STUD |
OVERALL LENGTH | 0.475 INCHES MAXIMUM |
MOUNTING METHOD | TERMINAL |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
TERMINAL LENGTH | 0.281 INCHES MINIMUM |
OVERALL DIAMETER | 0.875 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |