| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET ALL SEMICONDUCTOR DEVICE DIODE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
| INCLOSURE MATERIAL | METAL ALL SEMICONDUCTOR DEVICE DIODE |
| PROPRIETARY CHARACTERISTICS | PACS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
| MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL HEIGHT | 0.700 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL LENGTH | 0.700 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL WIDTH | 0.500 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 180.0 MAXIMUM REVERSE VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL TYPE AND QUANTITY | 7 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |