| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND |
| 100.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND |
| 1.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE |
| POWER RATING PER CHARACTERISTIC | 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
| INCLOSURE MATERIAL | METAL ALL SEMICONDUCTOR DEVICE DIODE |
| MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL LENGTH | 0.155 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL DIAMETER | 0.188 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |