SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND |
| 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC |
POWER RATING PER CHARACTERISTIC | 35.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
INCLOSURE MATERIAL | METAL |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND |
| 1 CASE |
OVERALL LENGTH | 0.340 INCHES MAXIMUM |
MOUNTING METHOD | UNTHREADED HOLE |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
MOUNTING FACILITY QUANTITY | 2 |
OVERALL DIAMETER | 0.620 INCHES MAXIMUM |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |