COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 68.0 NOMINAL REVERSE BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 ALL SEMICONDUCTOR DEVICE DIODE |
CURRENT RATING PER CHARACTERISTIC | 54.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE |
POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
INCLOSURE MATERIAL | GLASS ALL SEMICONDUCTOR DEVICE DIODE |
MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
TERMINAL LENGTH | 1.000 INCHES MINIMUM AND |
| 1.500 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
OVERALL LENGTH | 0.230 INCHES MINIMUM AND |
| 0.300 INCHES MAXIMUM ALL TRANSISTOR |
OVERALL DIAMETER | 0.085 INCHES MINIMUM AND |
| 0.130 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
COMPONENT FUNCTION RELATIONSHIP | MATCHED |
FUNCTION FOR WHICH DESIGNED | VOLTAGE REGULATOR |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | IF ONE OF THE MATCHED PAIR REQUIRES REPLACEMENT,BOTH MUST BE REPLACED |