SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 10.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC |
CURRENT RATING PER CHARACTERISTIC | 0.10 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
POWER RATING PER CHARACTERISTIC | 600.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
INCLOSURE MATERIAL | METAL |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.260 INCHES MAXIMUM |
MOUNTING METHOD | TERMINAL |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
TRANSFER RATIO | 75.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-5 |
TERMINAL LENGTH | 1.500 INCHES MINIMUM |
TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
FUNCTION FOR WHICH DESIGNED | SWITCHING |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | HEATSINK; JUNCTION PATTERN ARRANGEMENT: PNP |