5961-00-099-9809, SEMICONDUCTOR DEVICES,UNITIZED

National Stock Number:
5961-00-099-9809

Federal Supply Class:
5961

National Item Identification Number:
000999809

Description:
SEMICONDUCTOR DEVICES,UNITIZED

Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.

Manufacturer Information:

BACS8A3	81205	THE BOEING COMPANY
SD2211H3	04713	FREESCALE SEMICONDUCTOR, INC.
SDH2157	01295	TEXAS INSTRUMENTS INCORPORATED

Techincal Specification:

COMPONENT NAME AND QUANTITY	2 TRANSISTOR2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC	600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED	HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE
OVERALL DIAMETER	0.370 INCHES MAXIMUM0.370 INCHES MAXIMUM
OVERALL LENGTH	0.180 INCHES MAXIMUM0.180 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS JUNCTION125.0 CELSIUS JUNCTION
MOUNTING METHOD	TERMINALTERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE	HARDENEDHARDENED
POWER RATING PER CHARACTERISTIC	600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTORSILICON ALL TRANSISTOR
SPECIAL FEATURES	DESIGN ANALYSIS; TRANSISTORS JUNCTION PATTERN ARRANGEMENTS ARE NPNDESIGN ANALYSIS; TRANSISTORS JUNCTION PATTERN ARRANGEMENTS ARE NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC ALL TRANSISTOR50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER	0.210 INCHES MAXIMUM0.210 INCHES MAXIMUM
TERMINAL LENGTH	1.500 INCHES MINIMUM1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY	6 UNINSULATED WIRE LEAD6 UNINSULATED WIRE LEAD

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