5961-00-103-9627, SEMICONDUCTOR DEVICES,UNITIZED

5950-00-103-9625 TRANSFORMER,RADIO FREQUENCY

5961-00-103-9633 SEMICONDUCTOR DEVICE,DIODE

National Stock Number:
5961-00-103-9627

Federal Supply Class:
5961

National Item Identification Number:
001039627

Description:
SEMICONDUCTOR DEVICES,UNITIZED

Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.

Manufacturer Information:

2234499	10001	NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
2N2060	07263	FAIRCHILD SEMICONDUCTOR CORP
BUWEPSDWG2234499	15090	RAYTHEON COMPANY

Techincal Specification:

COMPONENT NAME AND QUANTITY	2 TRANSISTOR2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC	500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED	HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE
OVERALL DIAMETER	0.370 INCHES MAXIMUM0.370 INCHES MAXIMUM
OVERALL LENGTH	0.180 INCHES MAXIMUM0.180 INCHES MAXIMUM
MOUNTING METHOD	TERMINALTERMINAL
POWER RATING PER CHARACTERISTIC	500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTORSILICON ALL TRANSISTOR
SPECIAL FEATURES	INTERNAL JUNCTION CONFIGURATION TRANSISTOR NPNINTERNAL JUNCTION CONFIGURATION TRANSISTOR NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER	0.200 INCHES NOMINAL0.200 INCHES NOMINAL
TERMINAL LENGTH	1.500 INCHES MINIMUM1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY	7 UNINSULATED WIRE LEAD7 UNINSULATED WIRE LEAD
TRANSFER RATIO	50.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR50.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR

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