| CURRENT RATING PER CHARACTERISTIC | 20.00 MICROAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN20.00 MICROAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN |
| FEATURES PROVIDED | HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE |
| INTERNAL CONFIGURATION | JUNCTION CONTACTJUNCTION CONTACT |
| OVERALL LENGTH | 0.400 INCHES MAXIMUM0.400 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.427 INCHES MINIMUM AND 0.427 INCHES MINIMUM AND 0.437 INCHES MAXIMUM0.437 INCHES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 CELSIUS JUNCTION100.0 CELSIUS JUNCTION |
| MOUNTING METHOD | TERMINALTERMINAL |
| POWER RATING PER CHARACTERISTIC | 30.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION30.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| SEMICONDUCTOR MATERIAL | SILICONSILICON |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPNJUNCTION PATTERN ARRANGEMENT: NPN |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL0.100 INCHES NOMINAL |
| TERMINAL LENGTH | 0.500 INCHES NOMINAL0.500 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 TAB, SOLDER LUG3 TAB, SOLDER LUG |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -180.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -180.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN-8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |