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National Stock Number:
5961-00-111-8405
Federal Supply Class:
5961
National Item Identification Number:
001118405
Description:
TRANSISTOR
Detail:
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
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Manufacturer Information:
| 2N717 | 01281 | TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES | | 2N717 | 01295 | TEXAS INSTRUMENTS INCORPORATED | | 2N717 | 03877 | GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP | | 2N717 | 15818 | TELCOM SEMICONDUCTOR INC | | 2N717 | 3B150 | RAYTHEON COMPANY | | 2N717 | 49956 | RAYTHEON COMPANY | | 4JX11B2180 | 03508 | GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT | | 65A5A74-1 | 10001 | NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER |
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Techincal Specification:
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR | | FEATURES PROVIDED | HERMETICALLY SEALED CASE | | INCLOSURE MATERIAL | METAL | | INTERNAL CONFIGURATION | JUNCTION CONTACT | | OVERALL DIAMETER | 0.195 INCHES MAXIMUM | | OVERALL LENGTH | 0.210 INCHES MAXIMUM | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION | | MOUNTING METHOD | TERMINAL | | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION | | SEMICONDUCTOR MATERIAL | SILICON | | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN | | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL | | TERMINAL LENGTH | 0.500 INCHES MINIMUM | | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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