| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND |
| 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
| CURRENT RATING PER CHARACTERISTIC | 50.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN |
| POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS |
| INCLOSURE MATERIAL | GLASS |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.700 MILLIMETERS MAXIMUM |
| MOUNTING METHOD | TERMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | -55.0 DEG CELSIUS CASE AND |
| 175.0 DEG CELSIUS CASE |
| MOUNTING FACILITY QUANTITY | 3 |
| TERMINAL LENGTH | 0.200 MILLIMETERS MAXIMUM |
| TERMINAL CIRCLE DIAMETER | 0.209 MILLIMETERS MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | HIGH FREQUENCY LOW POWER SILICON NPN BJT; JUNCTION PATTERN ARRANGEMENT: NPN |