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National Stock Number:
5961-00-117-7936
Federal Supply Class:
5961
National Item Identification Number:
001177936
Description:
SEMICONDUCTOR DEVICES,UNITIZED
Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.
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Manufacturer Information:
| 2N2060A | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | | 2N2060B | 07263 | FAIRCHILD SEMICONDUCTOR CORP | | 2N2060B | 30043 | SOLID STATE DEVICES, INC | | 2N2060B | 31338 | SEMITRONICS CORP | | 2N2060B | 50891 | SEMICONDUCTOR TECHNOLOGY, INC. | | 2N2060B | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | | 2N2060BM | 50891 | SEMICONDUCTOR TECHNOLOGY, INC. | | 615166-1 | 37695 | RAYTHEON COMPANY | | RELEASE5176 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
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Techincal Specification:
| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR | | CURRENT RATING PER CHARACTERISTIC | 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR | | FEATURES PROVIDED | HERMETICALLY SEALED CASE | | INCLOSURE MATERIAL | METAL | | OVERALL DIAMETER | 0.335 INCHES MAXIMUM | | OVERALL LENGTH | 0.260 INCHES MAXIMUM | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION | | MOUNTING METHOD | TERMINAL | | SPECIAL FEATURES | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN | | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR | | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR | | SPECIFICATION/STANDARD DATA | 80131-RELEASE5176 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION | | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL | | TERMINAL LENGTH | 1.500 INCHES MINIMUM | | TERMINAL TYPE AND QUANTITY | 6 UNINSULATED WIRE LEAD | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR |
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