| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND |
| 60.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
| CURRENT RATING PER CHARACTERISTIC | 50.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER |
| POWER RATING PER CHARACTERISTIC | 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| INCLOSURE MATERIAL | PLASTIC |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.175 INCHES MINIMUM AND |
| 0.205 INCHES MAXIMUM |
| MOUNTING METHOD | TERMINAL |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| OVERALL HEIGHT | 0.170 INCHES MINIMUM AND |
| 0.210 INCHES MAXIMUM |
| OVERALL WIDTH | 0.125 INCHES MINIMUM AND |
| 0.165 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |