| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| INTERNAL CONFIGURATION | FIELD EFFECT ALL TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 35.0 MAXIMUM DRAIN TO GATE VOLTAGE ALL TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR |
| POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR |
| INCLOSURE MATERIAL | METAL ALL TRANSISTOR |
| MOUNTING METHOD | TERMINAL ALL TRANSISTOR |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM ALL TRANSISTOR |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL ALL TRANSISTOR |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD ALL TRANSISTOR |
| OVERALL LENGTH | 0.190 INCHES NOMINAL ALL TRANSISTOR |
| OVERALL DIAMETER | 0.219 INCHES NOMINAL ALL TRANSISTOR |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| FIELD FORCE EFFECT TYPE | ELECTROSTATIC CHARGE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE AND |
| ELECTROSTATIC SENSITIVE |