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National Stock Number:
5961-00-828-0719
Federal Supply Class:
5961
National Item Identification Number:
008280719
Description:
TRANSISTOR
Detail:
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
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Manufacturer Information:
| 062-055 | 23042 | TRILITHIC, INC. | | 151-0311-00 | K3976 | TEKTRONIX UK LTD | | 243651 | K0653 | ULTRA ELECTRONICS PRECISION AIR &LAND SYSTEMS | | 294-227 | K2504 | RS COMPONENTS LIMITED | | 243651 | U3979 | ULTRA ELECTRONICS LTD ELECTRONICS DI ISION | | 243651 | U6454 | ULTRA PCS LIMITED | | MJE340 | 04713 | FREESCALE SEMICONDUCTOR, INC. | | NT340 | 04713 | FREESCALE SEMICONDUCTOR, INC. | | 7210085-003 | 05157 | COHU, INC. | | MJE340 | 55464 | CENTRAL SEMICONDUCTOR, LLC | | BD232 | F4202 | GENTER SUCC ANCIENS ETS E. DEBETTE M | | 41172-401-6 | K4547 | SIEMENS AIR TRAFFIC MANAGEMENT | | A55032-960 | K4556 | BRITISH AEROSPACE DEFENCE SYSTEMS LTD T/A BAE SYSTEMS | | A55032-960 | KC1M9 | BAE SYSTEMS MARITIME SERVICESLIMITED | | PR11316 | 09272 | FESTO DIDACTIC, INC | | V132564 | B1224 | BARCO NV | | V22916-X2-A27 | C0363 | NOKIA SOLUTIONS AND NETWORKS GMBH &CO. KG | | Q62702-L47-F6 | C4751 | EPCOS AG | | Q62702-L47-F6 | D1180 | EPCOS AG ABT. PR ROE K PM | | SCUL00340 | F6512 | MORS TECHNOLOGIES |
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Techincal Specification:
| CURRENT RATING PER CHARACTERISTIC | 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC | | FEATURES PROVIDED | HERMETICALLY SEALED CASE | | INTERNAL CONFIGURATION | JUNCTION CONTACT | | MATERIAL | PLASTIC ENCLOSURE | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION | | MOUNTING FACILITY QUANTITY | 1 | | MOUNTING METHOD | UNTHREADED HOLE(S) | | OVERALL DIAMETER | 0.495 INCHES MINIMUM AND 0.505 INCHES MAXIMUM | | OVERALL LENGTH | 0.635 INCHES MINIMUM AND 0.645 INCHES MAXIMUM | | POWER RATING PER CHARACTERISTIC | 20.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION | | SEMICONDUCTOR MATERIAL | SILICON | | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN | | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
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