| FEATURES PROVIDED | MONOLITHIC AND LOW POWER |
| INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 8 STATIC RANDOM ACCESS MEMORY (SRAM) LOW POWER MONOLITHIC SILICON |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| MEMORY DEVICE TYPE | RAM |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| SPECIAL FEATURES | CIRCUIT FUNCTION 128K X 8LOW POWWER CMOS SRAM DUAL CE / ACCESS TIME 35 NS |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 32 CASE |
| TEST DATA DOCUMENT | 96906-MIL-STD-833 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |